1. Wensen Ai, Xuejiang Chen, Jianmei Feng. Microscopic origins of anisotropy for the epitaxial growth of 3C-SiC (0001) vicinal surface: A Kinetic Monte Carlo study. Journal of Applied Physics. 131 (2022) 125304.
2. Wensen Ai, Xuejiang Chen, Jianmei Feng. Early stage nucleation mechanism for SiC(0001) surface epitaxial growth. Journal of Vacuum Science and Technology A. 40 (2022) 033201.
3. Wensen Ai, Xuejiang Chen, Yuan Li, Hao Zhao. Application of self- consistent rate equations approach for SiC (0001) surface epitaxial growth. Computational Materials Science 188 (2021) 110253.
4. Wensen Ai, Xuejiang Chen. Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage. Journal of Vacuum Science and Technology A 41 (2023) 4.
5. Xuejiang Chen, Wensen Ai, Hao Zhao, Yuan Li, Jianmei Feng. Dynamic behavior of clusters in the early stage of SiC (0001) epitaxial growth: A kinetic Monte Carlo study. Vacuum 188 (2021) 110189.
6. Peng Su, Wensen Ai, Xuejiang Chen, Lijun Liu. Microscopic study of submonolayer nucleation characteristics during GaN (0001) homoepitaxial growth. Journal of Vacuum Science and Technology A, 41（2023）062704.
7. Xuejiang Chen, Hao Zhao, Wensen Ai. Study on the competitive growth mechanism of SiC polytypes using Kinetic Monte Carlo method. Journal of Crystal Growth 599 (2021) 126042.
8. Yuan. Li, Xuejiang. Chen, Wensen Ai. Kinetic Monte Carlo method for epitaxial 3C-SiC (0001) growth on vicinal surfaces. Computational Materials Science 197 (2021) 110607.
9. Xuejiang Chen, Qian Xia, Hao Zhao, and Wensen Ai. Effect of Deposition Flux on Polytypic Competitive Growth of SiC Crystal by Kinetic Monte Carlo Method. Physica Status Solidi B 260 (2023) 2200307.
10. Xuejiang Chen, Xinyao Zhang, Wensen Ai, Yishan Lin. Investigation on the mechanism of instability for step morphology during 3C-SiC (111) vicinal surface epitaxial growth. Applied Surface Science 684 (2025) 161788.
11. Yuan. Li, Xuejiang. Chen, Wensen Ai. Kinetic Monte Carlo simulation study of the early stages of epitaxial SiC(0001) growth. Journal of Crystal Growth 617 (2023) 127291
12 Xuejiang Chen, Xinyao Zhang, Wensen Ai. Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface. Journal of Vacuum Science and Technology A 42 (2024) 022703
13. Qian Xia , Xuejiang Chen, Wensen Ai. Study on three-dimensional critical nucleation on a planar substrate of 3C-SiC crystal. Journal of Crystal Growth 612 (2023) 127195
